Growth defects in heteroepitaxial diamond
نویسندگان
چکیده
In focus of this report are the mechanisms formation, propagation, and interaction growth defects in heteroepitaxial diamond films along with their impact on optical emission properties N- Si-vacancy (NV SiV) color centers. Here, we analyze discuss incoherent grain boundaries (IGBs) extended a nitrogen- boron-doped heterodiamond nucleated grown Ir(001) via bias-enhanced nucleation chemical vapor deposition techniques. We show that low-angle IGBs alter structural NV SiV complexes by subduing supporting formation interstitial dominating faulted IGB regions. also demonstrate IGB-confined threading dislocations responsible for vertical transport incorporation Si impurities thick layers, leading to an enhanced from IGBs.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0045644